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| SBCT1020 ... SBCT10100 SBCT1020 ... SBCT10100 Schottky Barrier Rectifiers - Common Cathode Schottky-Barrier-Gleichrichter - Gemeinsame Kathode Version 2007-01-17 100.2 3 4 3.8 Type Typ Nominal Current Nennstrom 4 10 A 20...100 V TO-220AB 2.2g 15.7 Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Kunststoffgehause 123 3.4 13.2 1.5 0.9 2.54 123 Weight approx. Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging in tubes Standard Lieferform in Stangen Dimensions - Mae [mm] Maximum ratings and Characteristics Type Typ Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] 20 30 40 45 50 60 90 100 Surge peak reverse voltage Stospitzensperrspannung VRSM [V] 20 30 40 45 50 60 90 100 TC = 100C f > 15 Hz Grenz- und Kennwerte Forward Voltage Durchlass-Spannung VF [V] 1) 2) IF = 5 A IF = 10 A < 0.63 < 0.63 < 0.63 < 0.63 < 0.79 < 0.79 < 0.92 < 0.92 5 A 2) 10 A 3) 20 A 2) 100/120 A 2) 100/120 A 2) 50 A2s 2) -50...+150C -50...+175C < 0.55 < 0.55 < 0.55 < 0.55 < 0.70 < 0.70 < 0.85 < 0.85 IFAV IFAV IFRM IFSM IFSM i2t SBCT1020 SBCT1030 SBCT1040 SBCT1045 SBCT1050 SBCT1060 SBCT1090 SBCT10100 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last Repetitive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50/60 Hz half sine-wave SBCT1020... TA = 25C Stostrom fur eine 50/60 Hz Sinus-Halbwelle SBCT1060 Peak forward surge current, 50/60 Hz half sine-wave SBCT1080... TA = 25C Stostrom fur eine 50/60 Hz Sinus-Halbwelle SBCT10100 Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur 1 2 3 Tj = 25C Per diode - Pro Diode Per device (parallel operation) - Pro Bauteil (Parallelbetrieb) http://www.diotec.com/ TA = 25C Tj TS (c) Diotec Semiconductor AG 1 SBCT1020 ... SBCT10100 Characteristics Leakage current Sperrstrom Thermal resistance junction to case Warmewiderstand Sperrschicht - Gehause Tj = 25C Tj = 100C VR = VRRM IR RthC Kennwerte < 300 A < 7 mA < 3.0 K/W 1) 120 [%] 100 102 [A] 10 SBCT1020...SBCT1045 80 1 SBCT1050, SBCT1060 60 40 10 20 IFAV 0 0 TA 50 100 150 [C] 1 -1 SBCT1080, SBCT10100 IF 10 -2 0 Rated forward current versus ambient temperature ) Zul. Richtstrom in Abh. von der Umgebungstemp.1 ) 0.4 0.6 1.0 VF [V] Forward characteristics (typical values) Durchlasskennlinien (typische Werte) 1 Per device (parallel operation) - Pro Bauteil (Parallelbetrieb) http://www.diotec.com/ (c) Diotec Semiconductor AG 2 |
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